• DocumentCode
    1496614
  • Title

    Heterostructure barrier varactors on copper substrate

  • Author

    Dillner, L. ; Stake, J. ; Kollberg, E.L.

  • Author_Institution
    Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
  • Volume
    35
  • Issue
    4
  • fYear
    1999
  • fDate
    2/18/1999 12:00:00 AM
  • Firstpage
    339
  • Lastpage
    341
  • Abstract
    The authors demonstrate a fabrication process where heterostructure barrier varactor diodes are fabricated on a copper substrate which offers reduced parasitic losses and improved thermal conductivity. This has been achieved without degrading the electrical characteristics
  • Keywords
    copper; losses; millimetre wave diodes; semiconductor technology; substrates; thermal conductivity; varactors; Cu; Cu substrate; fabrication process; heterostructure barrier varactors; parasitic losses reduction; thermal conductivity improvement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990255
  • Filename
    756735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1496614