Title :
Low temperature InP layer transfer
Author :
Tong, Q.-Y. ; Chao, Y.-L. ; Huang, L.-J. ; Gosele, U.
Author_Institution :
Lab. of Wafer Bonding, Duke Univ., Durham, NC, USA
fDate :
2/18/1999 12:00:00 AM
Abstract :
High quality single crystalline 3 in InP thin layers were transferred onto oxidised Si substrates at 150°C by wafer bonding and layer splitting from InP wafers which were co-implanted by B and H ions with the H implantation performed at 90°C
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; ion implantation; semiconductor epitaxial layers; wafer bonding; 150 C; 3 in; 90 C; B ions; H ions; InP thin layers; InP-InP:B,H; InP-SiO2-Si; InP:B,H; OEIC; Si; Si signal processing circuits; SiO2; co-implantation; high quality single crystalline thin layers; layer splitting; low temperature InP layer transfer; optoelectronic devices; oxidised Si substrates; wafer bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990226
