Title :
New annealing processes and explanation for novel silicon pn junctions formed by proton implantation
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
fDate :
2/18/1999 12:00:00 AM
Abstract :
Proton-implanted n-type Si wafers were annealed at 950°C to achieve novel pn junctions. The novel pn junctions are explained by the combined use of four models. The background (e.g. oxygen impurity) of an Si wafer is suggested to play a key role in creating the novel pn junction
Keywords :
annealing; elemental semiconductors; ion implantation; p-n junctions; semiconductor process modelling; silicon; 950 C; Si p-n junction formation; Si:H; annealing processes; models; n-type Si wafers; oxygen impurity; proton implantation; proton-implanted Si wafers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990195
