DocumentCode
1496631
Title
Numerical analysis of substrate effect on turn-on characteristics of GaAs MESFET
Author
Horio, K.
Author_Institution
Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
Volume
35
Issue
4
fYear
1999
fDate
2/18/1999 12:00:00 AM
Firstpage
343
Lastpage
344
Abstract
The effects of substrate trap `EL2´ on the turn-on characteristics of GaAs MESFETs are studied through two-dimensional simulation. It is found that abnormal current overshoot and subsequent slow transients can be observed due to EL2 when the off-state gate voltage is strongly negative and electrons are also depleted in the substrate
Keywords
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; numerical analysis; semiconductor device models; substrates; surface states; 2D simulation; EL2 deep traps; GaAs; GaAs MESFET; abnormal current overshoot; numerical analysis; offstate gate voltage; slow transients; substrate effect; substrate trap; turn-on characteristics; two-dimensional simulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990198
Filename
756738
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