Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

Author

Raeissi, Bahman ; Piscator, Johan ; Engström, Olof

Author_Institution

Dept. of Microtechnol. & Nanosci.-MC2, Chalmers Univ. of Technol., Göteborg, Sweden

Volume

57

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

1702

Lastpage

1705

Abstract

Multiparameter admittance spectroscopy (MPAS) measurements have been performed on Al/HfO_2/SiO_x/Si structures before and after postmetallization annealing. Contour plots of conductance data as a function of the logarithm of inverted signal frequency and applied voltage as obtained by MPAS are compared with standard capacitance versus voltage ( C-V) data demonstrating the advantage of MPAS as a diagnostic tool. MPAS reveals more detailed properties of oxide/semiconductor interface states and renders measured data for better perceptiveness.

Keywords

MIS structures; aluminium; annealing; electric admittance; hafnium compounds; metallisation; silicon; silicon compounds; Al-HfO₂-SiO_x-Si; applied voltage; capacitance versus voltage data; conductance data; contour plots; diagnostic tool; interface states; inverted signal frequency; multiparameter admittance spectroscopy; multiparameter admittance spectroscopy measurements; oxide-semiconductor interfaces; postmetallization annealing; Admittance measurement; Annealing; Capacitance; Capacitance-voltage characteristics; Frequency; Interface states; Performance evaluation; Rendering (computer graphics); Spectroscopy; Voltage; Admittance; conductance method; high- $k$ material; interface states; metal–oxide–semiconductor (MOS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2049064

Filename

5467143