Title :
Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces
Author :
Raeissi, Bahman ; Piscator, Johan ; Engström, Olof
Author_Institution :
Dept. of Microtechnol. & Nanosci.-MC2, Chalmers Univ. of Technol., Göteborg, Sweden
fDate :
7/1/2010 12:00:00 AM
Abstract :
Multiparameter admittance spectroscopy (MPAS) measurements have been performed on Al/HfO_2/SiO_x/Si structures before and after postmetallization annealing. Contour plots of conductance data as a function of the logarithm of inverted signal frequency and applied voltage as obtained by MPAS are compared with standard capacitance versus voltage ( C-V) data demonstrating the advantage of MPAS as a diagnostic tool. MPAS reveals more detailed properties of oxide/semiconductor interface states and renders measured data for better perceptiveness.
Keywords :
MIS structures; aluminium; annealing; electric admittance; hafnium compounds; metallisation; silicon; silicon compounds; Al-HfO2-SiOx-Si; applied voltage; capacitance versus voltage data; conductance data; contour plots; diagnostic tool; interface states; inverted signal frequency; multiparameter admittance spectroscopy; multiparameter admittance spectroscopy measurements; oxide-semiconductor interfaces; postmetallization annealing; Admittance measurement; Annealing; Capacitance; Capacitance-voltage characteristics; Frequency; Interface states; Performance evaluation; Rendering (computer graphics); Spectroscopy; Voltage; Admittance; conductance method; high- $k$ material; interface states; metal–oxide–semiconductor (MOS);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2049064
