Hot-carrier-stress effects on gate-induced drain leakage current in n-channel MOSFETs

Author

Lo, G.Q. ; Joshi, A.B. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

12

Issue

1

fYear

1991

Firstpage

5

Lastpage

7

Abstract

The effects of hot-carrier stress on gate-induced drain leakage (GIDL) current in n-channel MOSFETs with thin gate oxides are studied. It is found that the effects of generated interface traps ( Delta D/sub it/) and oxide trapped charge on the GIDL current enhancement are very different. Specifically, it is shown that the oxide trapped charge only shifts the flat-band voltage, unlike Delta D/sub it/. Besides band-to-band (B-B) tunneling, Delta D/sub it/ introduces an additional trap-assisted leakage current component. Evidence for this extra component is provided by hole injection. While trapped-charge induced leakage current can be eliminated by a hole injection subsequent to stress, such injection does not suppress interface-trap-induced leakage current.<>

Keywords

hot carriers; insulated gate field effect transistors; leakage currents; band-to-band tunneling; effects of hot-carrier stress; gate-induced drain leakage current; hole injection; interface-trap-induced leakage current; n-channel MOSFETs; oxide trapped charge; thin gate oxides; trap-assisted leakage current; trapped-charge induced leakage current; Degradation; Electron traps; Hot carrier effects; Hot carriers; Leakage current; MOSFETs; Stress measurement; Subthreshold current; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75679

Filename

75679