Effect of synchrotron X-ray radiation on the channel hot-carrier reliability of reoxidized nitrided silicon dioxide

Author

Dunn, Gregory J.

Author_Institution

US Dept. of State, Washington, DC, USA

Volume

12

Issue

1

fYear

1991

Firstpage

8

Lastpage

9

Abstract

Channel hot-carrier-induced degradation was studied in reoxidized nitrided oxide n-channel MOSFETs which were exposed to 1-2-keV X-rays from a synchrotron source. It is found that transconductance degradation under high gate bias stress (Vg=1.3 V/sub d/) is enhanced by the X-ray exposure to a lesser degree in reoxidized nitrided oxide (RNO) devices than in conventional oxide devices. This indicates that radiation generates fewer electron traps in RNO than in a conventional oxide.<>

Keywords

MOS integrated circuits; VLSI; X-ray effects; X-ray lithography; insulated gate field effect transistors; integrated circuit technology; nitridation; oxidation; radiation hardening (electronics); reliability; 1 to 2 keV; 1.3 V; RNO; channel hot carrier induced degradation; channel hot-carrier reliability; high gate bias stress; n-channel MOSFETs; reoxidized nitrided oxide; synchrotron X-ray radiation; transconductance degradation; Annealing; Circuits; Degradation; Electron traps; Fabrication; Hot carrier effects; Hot carriers; Ionizing radiation; Stress; Synchrotron radiation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75680

Filename

75680