Title :
Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors
Author :
Castañer, Luis M. ; Ashburn, Peter ; Wolstenholme, Graham R
Author_Institution :
Dept. de Ingenieria Electron., Univ. Politecnica de Catalunya, Barcelona, Spain
Abstract :
Results of measurements of base current and emitter resistance of polysilicon emitter transistors subjected to different rapid thermal anneal processes of the interfacial layer and different emitter drive-in times are presented. It is shown that a rapid thermal anneal for temperatures on the order of 1050 degrees C leads to devices in which the base current is essentially independent of the emitter drive-in time. The emitter resistance obtained in devices given this interface anneal is considerably lower than that in devices without the anneal, and hence the values obtained are compatible with the requirements for realizing submicrometer bipolar circuits.<>
Keywords :
VLSI; annealing; bipolar integrated circuits; bipolar transistors; semiconductor technology; 1050 C; base current; current gain; emitter drive-in times; emitter resistance; interface anneal; interfacial layer; measurements; polycrystalline Si emitters; polysilicon emitter bipolar transistors; rapid thermal anneal; rapid thermal processing; submicrometer bipolar circuits; Bipolar transistors; Circuits; Current measurement; Electrical resistance measurement; Gain measurement; Hafnium; Rapid thermal annealing; Rapid thermal processing; Temperature; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
