Title :
A deep-submicrometer microwave/digital CMOS/SOS technology
Author :
Schmitz, Adele E. ; Walden, Robert H. ; Larson, Lawrence E. ; Rosenbaum, Steven E. ; Metzger, Robert A. ; Behnke, John R. ; Macdonald, Perry A.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
0.35- mu m complementary metal-oxide-semiconductor (CMOS)/silicon-on-sapphire (SOS) n- and p-channel MOSFETs with a metal-over-polysilicon T-gate structure for monolithic microwave integrated circuit (MMIC) and digital applications are reported. The measured values for the current-gain cutoff frequency f/sub T/ were >or=20 GHz for both n-channel and p-channel devices, and the values for the unilateral power-gain cutoff frequency f/sub max/ were 37 GHz for the p-channel and 53 GHz for the n-channel MOSFETs. The low effective resistance of the T-gate structure contributed to the very high f/sub max/ values. It is believed that these are the highest f/sub T/ and f/sub max/ values ever reported for MOS devices. The potential of SOS submicrometer MOSFETs for microwave circuit applications is demonstrated.<>
Keywords :
CMOS integrated circuits; MMIC; VLSI; digital integrated circuits; integrated circuit technology; semiconductor device models; 0.35 micron; 20 to 53 GHz; MMIC; MOS devices; SOS submicrometer MOSFETs; Si; Si-Al/sub 2/O/sub 3/; current-gain cutoff frequency; deep submicron MOSFETs; deep-submicrometer; digital ICs; f/sub T/; f/sub max/; low gate resistance; metal-over-polysilicon T-gate structure; microwave CMOS technology; microwave/digital CMOS/SOS technology; monolithic microwave integrated circuit; n-channel MOSFETs; p-channel MOSFETs; power-gain cutoff frequency; Application specific integrated circuits; CMOS digital integrated circuits; CMOS integrated circuits; CMOS technology; Cutoff frequency; Integrated circuit technology; MMICs; MOSFETs; Microwave devices; Microwave technology;
Journal_Title :
Electron Device Letters, IEEE
