DocumentCode :
1496721
Title :
Within-Layer Overlay Impact for Design in Metal Double Patterning
Author :
Ghaida, Rani S. ; Gupta, Puneet
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Volume :
23
Issue :
3
fYear :
2010
Firstpage :
381
Lastpage :
390
Abstract :
In double patterning lithography (DPL), overlay errors between two patterning steps of the same layer translate into CD variability. Since CD uniformity budget is very tight, meeting requirement of overlay control is one of the biggest challenges for deploying DPL. In this paper, we electrically evaluate overlay errors for back-end-of-line DPL with the goal of studying relative effects of different overlay sources and interactions of overlay control with design parameters. Experimental results show the following: 1) the expected electrical impact of overlay in a path is not significant (<; 6% worst-case RC variation) and should be the basis for determining overlay budget requirement; 2) the worst-case electrical impact of overlay in a single line remains a serious concern (up to 16.6% ΔRC and up to 50 mV increase of peak crosstalk noise); 3) translational overlay error has the largest electrical impact compared to other overlay sources; and 4) overlay in y direction (x for horizontal metallization) has negligible electrical impact and, therefore, preferred routing direction should be taken into account for overlay sampling and alignment strategies. Design methods for reducing overlay electrical impact in wires are then identified. Finally, we explore positive/negative process options from an electrical perspective and conclude that positive process is preferred.
Keywords :
crosstalk; design; lithography; alignment strategy; back-end-of-line double patterning lithography; critical dimension variability; design; electrical impact; horizontal metallization; metal double patterning; overlay control; overlay sampling; peak crosstalk noise; translational overlay error; within-layer overlay impact; Alignment strategy; congestion; design for manufacturability; double patterning; layout decomposition; negative process; overlay; positive process; wire spreading; wire widening;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2010.2050157
Filename :
5467154
Link To Document :
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