Title :
Microwave performance of SOI n-MOSFETs and coplanar waveguides
Author :
Caviglia, Anthony L. ; Potter, R.C. ; West, L.J.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
Abstract :
The microwave performance of 1- mu m gate-length n-MOSFETs fabricated on both SIMOX and BESOI substrates was measured. The process included a self-aligned silicide in an otherwise conventional MOS sequence. Initial optimization yielded devices with an f/sub max/ of 14 GHz on BESOI and 11 GHz on SIMOX. Coplanar waveguides (CPWs) were fabricated on substrates with resistivities from 4 to 4000 Omega -cm. A loss of 1.8 dB/cm at 2 GHz was demonstrated on the 4000- Omega -cm float-zone substrate.<>
Keywords :
CMOS integrated circuits; MMIC; digital integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor-insulator boundaries; solid-state microwave devices; waveguides; 1 micron; 11 GHz; 14 GHz; 4 to 4000 ohmcm; BESOI substrates; CPWs; SIMOX; SIMOX substrates; SOI; Si-SiO/sub 2/-Si; coplanar waveguides; float-zone substrate; microwave performance; n-MOSFETs; optimization; resistivities; self-aligned silicide; Conductivity; Coplanar waveguides; Digital circuits; Fabrication; Gallium arsenide; MOSFET circuits; Microwave devices; Silicides; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
