Lateral insulated-gate bipolar transistor (LIGBT) with a segmented anode structure

Author

Sin, Johnny K O ; Mukherjee, Satyen

Author_Institution

North American Philips Corp., Briarcliff Manor, NY, USA

Volume

12

Issue

2

fYear

1991

Firstpage

45

Lastpage

47

Abstract

A novel lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using segments of p/sup +/ and n/sup +/ diffusions along the device width. This segmented design of the anode structure results in higher switching speed and reduction in device size. Depending on the value of the specific ON resistance, experimental results show that the segmented anode LIGBT has from 20% to 250% reduction in turn-off time as compared to the shorted anode LIGBT.<>

Keywords

bipolar transistors; insulated gate field effect transistors; power transistors; LIGBT; conductivity modulation; experimental results; higher switching speed; injection of minority carriers; lateral IGBT; lateral insulated-gate bipolar transistor; reduction in device size; reduction in turn-off time; segmented anode LIGBT; segmented anode structure; specific ON resistance; Anodes; Cathodes; Charge carrier processes; Conductivity; Electrons; Insulated gate bipolar transistors; Insulation; MOSFETs; Plasma devices; Switches;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75699

Filename

75699