DocumentCode :
1496809
Title :
A 209–233 GHz Frequency Source in 90 nm CMOS Technology
Author :
Khamaisi, Bassam ; Socher, Eran
Author_Institution :
Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
Volume :
22
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
260
Lastpage :
262
Abstract :
This letter presents a J-band signal source based on a third harmonic generation of a differential Colpitts voltage controlled oscillator (VCO). The source covers a frequency range from 209.3 to 233.3 GHz, which corresponds to a 10.8% total tuning range. This is the widest tuning range in a J-band source signal reported to date. The VCO was fabricated using a 90 nm Mixed-Mode/RF CMOS process; it provides - 6.2 Bm output power at 228 GHz, while consuming 48 mA from a 1.8 V supply, and an estimated phase noise of - 90.5 dBc/Hz at 1 MHz offset from the carrier.
Keywords :
CMOS integrated circuits; millimetre wave integrated circuits; phase noise; voltage-controlled oscillators; CMOS technology; J-band signal source; RF CMOS process; VCO; current 48 mA; differential Colpitts voltage controlled oscillator; frequency 1 MHz; frequency 209.3 GHz to 233.3 GHz; mixed-mode process; phase noise estimation; size 90 nm; third harmonic generation; voltage 1.8 V; CMOS integrated circuits; Frequency measurement; Power generation; Power measurement; Transistors; Tuning; Voltage-controlled oscillators; CMOS; Colpitts topology; J-band; millimeter-wave; voltage controlled oscillator (VCO);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2190272
Filename :
6184344
Link To Document :
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