A 209–233 GHz Frequency Source in 90 nm CMOS Technology

Author

Khamaisi, Bassam ; Socher, Eran

Author_Institution

Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel

Volume

22

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

260

Lastpage

262

Abstract

This letter presents a J-band signal source based on a third harmonic generation of a differential Colpitts voltage controlled oscillator (VCO). The source covers a frequency range from 209.3 to 233.3 GHz, which corresponds to a 10.8% total tuning range. This is the widest tuning range in a J-band source signal reported to date. The VCO was fabricated using a 90 nm Mixed-Mode/RF CMOS process; it provides - 6.2 Bm output power at 228 GHz, while consuming 48 mA from a 1.8 V supply, and an estimated phase noise of - 90.5 dBc/Hz at 1 MHz offset from the carrier.

Keywords

CMOS integrated circuits; millimetre wave integrated circuits; phase noise; voltage-controlled oscillators; CMOS technology; J-band signal source; RF CMOS process; VCO; current 48 mA; differential Colpitts voltage controlled oscillator; frequency 1 MHz; frequency 209.3 GHz to 233.3 GHz; mixed-mode process; phase noise estimation; size 90 nm; third harmonic generation; voltage 1.8 V; CMOS integrated circuits; Frequency measurement; Power generation; Power measurement; Transistors; Tuning; Voltage-controlled oscillators; CMOS; Colpitts topology; J-band; millimeter-wave; voltage controlled oscillator (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2190272

Filename

6184344