Novel hydrogen annealing for forming SiO/sub 2/ film by rapid thermal processing

Author

Arakawa, T. ; Fukuda, H. ; Ohno, S.

Author_Institution

OKI Electr. Inc. Co. Ltd., Tokyo, Japan

Volume

12

Issue

2

fYear

1991

Firstpage

66

Lastpage

67

Abstract

Hydrogen annealing at 700-1100 degrees C for 0-300 s has been combined with SiO/sub 2/ formation by rapid thermal processing (RTP). The SiO/sub 2/ films formed with the above processes were evaluated by C-V and I-V measurements and by time-dependent dielectric breakdown (TDDB) tests. These films provide longer time to breakdown andless positive charge generation than SiO/sub 2/ films formed without H/sub 2/ annealing. In particular, the SiO/sub 2/ formation-H/sub 2/ annealing SiO/sub 2/ formation process is quite effective in improving the dielectric strength of the thin RTP-SiO/sub 2/ film.<>

Keywords

annealing; dielectric thin films; electric strength; hydrogen; oxidation; silicon compounds; 0 to 300 s; 700 to 1100 C; C-V measurements; H/sub 2/ annealing; I-V measurements; RTP; SiO/sub 2/ film formation; SiO/sub 2/ formation; TDDB; dielectric strength; forming SiO/sub 2/ film; high quality; less positive charge generation; longer time to breakdown; rapid thermal processing; time-dependent dielectric breakdown; Dielectric breakdown; Dielectric measurements; Electric breakdown; Electrodes; Hydrogen; Oxidation; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75705

Filename

75705