Comments, with reply, on ´A new approach to optimizing the base profile for high-speed bipolar transistors´ by P.J. Van Wijnen and R.D. Gardner

Author

Hamel, J.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

12

Issue

2

fYear

1991

Firstpage

81

Lastpage

82

Abstract

The commenter claims that the fundamental approach of P.J. Van Wijnen and R.D. Gardner in the above-mentioned work (see ibid., vol.11, p.149-52, Apr. 1990) has already been proposed in L.J. Varnerin (Proc. IRE, vol.47, p.523-7, Apr. 1959). It is further claimed that the results shown in Varnerin regarding this approach to optimizing the base doping profile for maximum f/sub T/ are more general than those of Van Wijnen and Gardner, and lead to different conclusions regarding the optimum base doping profile. In a rely, the original authors admit they were unaware of the work of Varnerin, and offer some specific responses to the commenter´s points.<>

Keywords

bipolar transistors; doping profiles; semiconductor doping; base doping profile optimisation; high-speed bipolar transistors; previous work; work of Varnerin; Current measurement; Electric variables measurement; Electron devices; Equations; Gallium arsenide; Impact ionization; Leakage current; MESFETs; Semiconductor diodes; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75711

Filename

75711