Title :
High power efficient GaInAsP/InP (1.9 μm) laser diode arrays
Author :
He, X. ; Xu, D. ; Ovtchinnikov, A. ; Malarayap, F. ; Supe, R. ; Wilson, S. ; Patel, R.
Author_Institution :
Opto Power Corp., Tucson, AZ, USA
fDate :
3/4/1999 12:00:00 AM
Abstract :
A continuous wave (CW) power of 11 W with a power conversion efficiency of 23% has been demonstrated for a 1 cm wide array at 10°C heatsink temperature. The array operates at a CW optical power of up to 5.6 W at 40°C without thermal rolling. T0 for the array is 59.5 K. 100 W optical power (1 ms, 25% duty) was achieved for a 2D array. The lasing wavelength is 1.87 μm at 100 W
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor laser arrays; 1 cm; 1.87 to 1.9 micron; 10 to 40 C; 100 W; 23 percent; 5.6 to 11 W; CW power; GaInAsP-InP; GaInAsP/InP laser diode arrays; continuous wave power; high power efficient LD arrays;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990298
