DocumentCode :
1497108
Title :
Laser operation of Nd:LaF3 thin film grown by molecular beam epitaxy
Author :
Daran, E. ; Shepherd, D.P. ; Bhutta, T. ; Serrano, C.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Volume :
35
Issue :
5
fYear :
1999
fDate :
3/4/1999 12:00:00 AM
Firstpage :
398
Lastpage :
400
Abstract :
Details of the first laser operation of a dielectric waveguide fabricated by molecular beam epitaxy are presented. The growth process, Nd:LaF3 spectroscopic properties, and laser performance at 106 μm are discussed
Keywords :
epitaxial layers; lanthanum compounds; laser transitions; molecular beam epitaxial growth; neodymium; solid lasers; waveguide lasers; 106 micron; LaF3:Nd; MBE growth process; Nd:LaF3 thin film; dielectric waveguide; laser operation; molecular beam epitaxy; rare-earth doped waveguide laser; spectroscopic properties;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990303
Filename :
757144
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1497108
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