• DocumentCode
    1497108
  • Title

    Laser operation of Nd:LaF3 thin film grown by molecular beam epitaxy

  • Author

    Daran, E. ; Shepherd, D.P. ; Bhutta, T. ; Serrano, C.

  • Author_Institution
    Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    3/4/1999 12:00:00 AM
  • Firstpage
    398
  • Lastpage
    400
  • Abstract
    Details of the first laser operation of a dielectric waveguide fabricated by molecular beam epitaxy are presented. The growth process, Nd:LaF3 spectroscopic properties, and laser performance at 106 μm are discussed
  • Keywords
    epitaxial layers; lanthanum compounds; laser transitions; molecular beam epitaxial growth; neodymium; solid lasers; waveguide lasers; 106 micron; LaF3:Nd; MBE growth process; Nd:LaF3 thin film; dielectric waveguide; laser operation; molecular beam epitaxy; rare-earth doped waveguide laser; spectroscopic properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990303
  • Filename
    757144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1497108