Title :
AlAsSb-based distributed Bragg reflectors using InAlGaAs as high-index layer
Author :
Hall, E. ; Kroemer, H. ; Coldren, L.A.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA, USA
fDate :
3/4/1999 12:00:00 AM
Abstract :
The optical and electrical properties of InAlGaAs/AlAsSb distributed Bragg reflectors for long-wavelength vertical-cavity surface-emitting lasers are reported. This materials combination shows much lower resistances for p-type mirrors compared to AlGaAsSb/AlAsSb mirrors, resulting from a smaller valence band discontinuity
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; quantum well lasers; refractive index; surface emitting lasers; III-V semiconductors; InAlGaAs-AlAsSb; distributed Bragg reflectors; high-index layer; long-wavelength vertical-cavity surface-emitting lasers; p-type mirrors; valence band discontinuity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990293
