• DocumentCode
    1497238
  • Title

    Improved AlGaAs/lnGaAs HFETs due to double doped-channel design

  • Author

    Chien, Feng-Tso ; Chan, Yi-Jen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    3/4/1999 12:00:00 AM
  • Firstpage
    427
  • Lastpage
    428
  • Abstract
    Double doped-channel AlGaAs/InGaAs field effect transistors (D-DCFETs) have been proposed, fabricated, and compared with conventional doped-channel FETs (DCFETs). This double doped-channel design provides a higher current density, and a linear operation range over a wider dynamic range. These advantages suggest that the double doped-channel design is more suitable for linear and high power microwave device applications
  • Keywords
    doping profiles; AlGaAs-InGaAs; D-DCFETs; HFETs; III-V semiconductors; current density; double doped-channel design; dynamic range; high power microwave device applications; linear operation range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990278
  • Filename
    757164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1497238