Title :
Improved AlGaAs/lnGaAs HFETs due to double doped-channel design
Author :
Chien, Feng-Tso ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
3/4/1999 12:00:00 AM
Abstract :
Double doped-channel AlGaAs/InGaAs field effect transistors (D-DCFETs) have been proposed, fabricated, and compared with conventional doped-channel FETs (DCFETs). This double doped-channel design provides a higher current density, and a linear operation range over a wider dynamic range. These advantages suggest that the double doped-channel design is more suitable for linear and high power microwave device applications
Keywords :
doping profiles; AlGaAs-InGaAs; D-DCFETs; HFETs; III-V semiconductors; current density; double doped-channel design; dynamic range; high power microwave device applications; linear operation range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990278
