• DocumentCode
    1497245
  • Title

    In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

  • Author

    Pan, Hsi-jen ; Cheng, Shiou-Ying ; Chang, Wen-Lung ; Feng, Shun-Ching ; Yu, Kuo-Hui ; Liu, Wen-Chau

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    3/4/1999 12:00:00 AM
  • Firstpage
    428
  • Lastpage
    429
  • Abstract
    A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50 mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications
  • Keywords
    III-V semiconductors; aluminium compounds; conduction bands; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; δ-doped continuous-conduction-band; 50 mV; E-B heterojunction; III-V semiconductors; In0.53Al0.22Ga0.25As-InP; current gain; heterojunction bipolar transistor; offset voltage; potential spike;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990220
  • Filename
    757165
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1497245