DocumentCode :
1497245
Title :
In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure
Author :
Pan, Hsi-jen ; Cheng, Shiou-Ying ; Chang, Wen-Lung ; Feng, Shun-Ching ; Yu, Kuo-Hui ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
35
Issue :
5
fYear :
1999
fDate :
3/4/1999 12:00:00 AM
Firstpage :
428
Lastpage :
429
Abstract :
A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50 mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; δ-doped continuous-conduction-band; 50 mV; E-B heterojunction; III-V semiconductors; In0.53Al0.22Ga0.25As-InP; current gain; heterojunction bipolar transistor; offset voltage; potential spike;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990220
Filename :
757165
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1497245
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