Title :
SiGe p-channel MOSFETs with tungsten gate
Author :
Ternent, G. ; Asenov, A. ; Thayne, I.G. ; Macintyre, D.S. ; Thoms, S. ; Wilkinson, C.D.W. ; Parker, E.H.C. ; Gundlach, A.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
3/4/1999 12:00:00 AM
Abstract :
A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 μm resolution is demonstrated. Interface charge densities of MOS capacitors realised with the low pressure sputtered tungsten process are comparable with thermally evaporated aluminium gate technologies (5×1010cm-2 and 2×1011 cm -2 for W and Al, respectively). Initial results from 1 μm gate length SiGe p-channel MOSFETs using the tungsten-based process show devices with a transconductance of 33 mS/mm and effective channel mobility of 190 cm2/Vs
Keywords :
Ge-Si alloys; MOS capacitors; MOSFET; carrier mobility; semiconductor materials; silicon compounds; sputter deposition; tungsten; 1 micron; MOS capacitors; SiGe-SiO2-W; effective channel mobility; interface charge densities; low pressure sputtered process; p-channel MOSFETs; semiconductor materials; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990305
