Title :
Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer [NMOSFET]
Author :
Song, Y.H. ; Bae, J.C. ; Oonishi, M. ; Honda, T. ; Kurino, H. ; Koyanagi, M.
Author_Institution :
Dept. of Machine Intelligence & Syst. Eng., Tohoku Univ., Sendai, Japan
fDate :
3/4/1999 12:00:00 AM
Abstract :
A novel S/D junction technology for realising sub-0.1 μm NMOSFETs is proposed. In this technology. S/D extensions are formed using arsenic (As) diffusion from an As adsorbed atomic layer on the silicon surface by high temperature RTA. This method provides an extremely shallow extension (below 20 nm) with low sheet-resistance (below 2kΩ/□), maintaining a low junction leakage. NMOSFETs fabricated using this technology show better suppression of the short channel effect compared to conventional FETs
Keywords :
MOSFET; arsenic; doping profiles; rapid thermal annealing; semiconductor doping; thermal diffusion; 0.1 micron; As diffusion; NMOSFETs; S/D junction technology; Si:As; arsenic adsorbed layer; atomic layer doping; high temperature RTA; low junction leakage; n-channel MOSFET; short channel effect suppression; source/drain junction technology; ultra-shallow junction technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990299
