Title :
AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer
Author :
Chang, S.J. ; Chang, C.S. ; Su, Y.K. ; Chang, P.T. ; Wu, Y.R. ; Huang, K.H. ; Chen, T.P.
Author_Institution :
Nat. Sci. Council of Taiwan, Taiwan
Abstract :
A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED´s). It was found that the electroluminescence intensity of the multi-quantum well (MQW)+TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW+multiquantum barrier (MQB) AlGaInP LED´s. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.
Keywords :
aluminium compounds; claddings; electroluminescence; gallium compounds; high-temperature techniques; indium compounds; light emitting diodes; semiconductor quantum wells; 573 nm; AlGaInP; AlGaInP yellow-green light-emitting diodes; MQW TSBC AlGaInP 573-nm LED; MQW multiquantum barrier AlGaInP LED; TSBC structure; electroluminescence intensity; heat sensitive; high-temperature operation; multi-quantum well; potential barrier; tensile strain barrier cladding layer; Distributed Bragg reflectors; Electroluminescence; Electrons; Epitaxial growth; Leakage current; Light emitting diodes; MOCVD; Quantum well devices; Tensile strain; Thickness control;
Journal_Title :
Photonics Technology Letters, IEEE
