• DocumentCode
    1497537
  • Title

    Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continuum quantum-well infrared photodetectors

  • Author

    Chu, C.H. ; Hung, C.I. ; Wang, Y.H. ; Houng, M.P.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    9
  • Issue
    9
  • fYear
    1997
  • Firstpage
    1262
  • Lastpage
    1264
  • Abstract
    We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques.
  • Keywords
    Fermi level; dark conductivity; infrared detectors; phonons; photodetectors; semiconductor device models; semiconductor quantum wells; tunnelling; Fermi levels; IR detectors; bound-to-continuum quantum-well infrared photodetectors; continuum states; dark current; field-induced mixing effect; nonlinear temperature dependence; phonon scattering rate; quantum capture; simulated dark currents; theoretical model; tunneling mechanisms; tunneling rate; Dark current; Electrons; Infrared detectors; Particle scattering; Photodetectors; Quantum mechanics; Quantum wells; Temperature dependence; Thermionic emission; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.618498
  • Filename
    618498