DocumentCode
1497537
Title
Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continuum quantum-well infrared photodetectors
Author
Chu, C.H. ; Hung, C.I. ; Wang, Y.H. ; Houng, M.P.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
9
Issue
9
fYear
1997
Firstpage
1262
Lastpage
1264
Abstract
We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques.
Keywords
Fermi level; dark conductivity; infrared detectors; phonons; photodetectors; semiconductor device models; semiconductor quantum wells; tunnelling; Fermi levels; IR detectors; bound-to-continuum quantum-well infrared photodetectors; continuum states; dark current; field-induced mixing effect; nonlinear temperature dependence; phonon scattering rate; quantum capture; simulated dark currents; theoretical model; tunneling mechanisms; tunneling rate; Dark current; Electrons; Infrared detectors; Particle scattering; Photodetectors; Quantum mechanics; Quantum wells; Temperature dependence; Thermionic emission; Tunneling;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.618498
Filename
618498
Link To Document