DocumentCode :
1497649
Title :
An Adaptive Flash Translation Layer for High-Performance Storage Systems
Author :
Wu, Chin-Hsien ; Lin, Hsin-Hung ; Kuo, Tei-Wei
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Volume :
29
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
953
Lastpage :
965
Abstract :
While the capacity of flash-memory storage systems keeps increasing significantly, an effective and efficient management of flash-memory space has become a critical design issue. Different granularities in space management impose different management costs and mapping efficiency. In this paper, we will explore an address translation mechanism (AddrTM) that can dynamically and adaptively switch between different granularities in the mapping of logical block addresses into physical block addresses in flash-memory management. The objective is to provide high performance in address mapping and space utilization and, at the same time, to have the main memory requirements, the garbage collection overhead, and the system initialization time under proper management. The experimental results show that the proposed adaptive mechanism can provide better performance improvement and practicability than other well-known coarse-grained management mechanisms over realistic workloads.
Keywords :
flash memories; adaptive flash translation layer; address translation mechanism; flash-memory; high-performance storage systems; logical block address mapping; Computer science; Costs; Design automation; Embedded system; File systems; Memory management; Nonvolatile memory; Power system management; Recycling; Switches; Embedded systems; flash translation layer; flash-memory; storage systems;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2010.2048362
Filename :
5467340
Link To Document :
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