Title :
Analysis of band-to-band tunneling leakage current in trench-capacitor DRAM cells
Author :
Ozaki, T. ; Nitayama, A. ; Hamamoto, T. ; Sunouchi, K. ; Horiguchi, F.
Author_Institution :
Toshiba ULSI Res. Center, Kawasaki, Japan
fDate :
3/1/1991 12:00:00 AM
Abstract :
Evidence demonstrating that the band-to-band tunneling leakage current occurs mainly at the edge of the self-aligned isolation rather than the trench upper corners is presented. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. It is shown that the leakage current limits the thickness of capacitor oxide to more than 80 AA even if the operation voltage is reduced to 3.3 V from 5 V.<>
Keywords :
DRAM chips; MOS integrated circuits; capacitors; integrated circuit technology; leakage currents; semiconductor device models; tunnelling; 3.3 V; 80 AA; LOCOS isolation; band-to-band tunneling leakage current; capacitor oxide thickness; operation voltage; scaling; self-aligned isolation; trench-capacitor DRAM cells; Capacitors; Current measurement; Degradation; Diodes; Leakage current; Oxidation; Rain; Random access memory; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
