Title :
Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
Author :
Lu, Tien-Chang ; Wu, Tzeng-Tsong ; Chen, Shih-Wei ; Tu, Po-Min ; Li, Zhen-Yu ; Chen, Chien-Kang ; Chen, Cheng-Hung ; Kuo, Hao-Chung ; Wang, Shing-Chung ; Zan, Hsiao-Wen ; Chang, Chun-Yen
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta2O5/SiO2 top DBR, a 7 λ-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; silicon compounds; spontaneous emission; surface emitting lasers; tantalum compounds; wide band gap semiconductors; AlN-GaN; DBR lasers; InGaN-GaN; Ta2O5-SiO2; continuous-wave operation; current-injected vertical-cavity surface-emitting lasers; emission wavelength; hybrid distributed Bragg reflectors; multiquantum wells; optical cavity; spontaneous emission coupling factors; temperature 293 K to 298 K; temperature-dependent laser threshold current; Distributed Bragg reflectors; Gallium nitride; Indium tin oxide; Optical pumping; Vertical cavity surface emitting lasers; Distributed Bragg reflectors (DBRs); GaN; vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2011.2116771
