Title :
Direct-coupled FET logic circuits on InP
Author :
Feuer, Mark D. ; He, Y. ; Shunk, S.C. ; Huang, J.-H. ; Vang, T.A. ; Brown-Goebeler, K.F. ; Chang, Tao-Yuan
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A process technology for direct-coupled FET logic (DCFL) circuits on InP substrates, based on enhancement-mode InGaAs/InAlAs heterostructure-insulated-gate FETs (HIGFETs) is discussed. Its performance was demonstrated by fabricating 11- and 19-stage ring oscillators. The circuits were fabricated on undoped lattice-matched heterostructures grown by molecular beam epitaxy (MBE), using a refractory-gate process with self-aligned sidewalls to achieve a lightly-doped-drain (LDD) structure. For a gate length of 1.2 mu m, with V/sub dd/=2 V, the best propagation delay observed was 23 ps/stage, with associated power of 2.2 mW/stage.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; insulated gate field effect transistors; integrated logic circuits; oscillators; 1.2 micron; 2 V; 2.2 mW; 23 ps; DCFL; HIGFETs; InGaAs-InAlAs; InP substrates; LDD; MBE; direct-coupled FET logic; enhancement-mode; gate length; heterostructure-insulated-gate FETs; lightly-doped-drain; molecular beam epitaxy; performance; power; process technology; propagation delay; refractory-gate process; ring oscillators; self-aligned sidewalls; semiconductors; undoped lattice-matched heterostructures; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic circuits; Molecular beam epitaxial growth; Optical refraction; Propagation delay; Ring oscillators; Substrates;
Journal_Title :
Electron Device Letters, IEEE
