Elimination of kink effect in fully depleted complementary buried-channel SOL MOSFET (FD CBCMOS) based on silicon direct bonding technology

For the fully depleted complementary buried-channel MOSFET (FD CBCMOS) discussed, although its operational principle is similar, its structure is different from that of the conventional buried-channel MOSFET in which a p-n junction exists at the surface of the channel region. Moreover, the p-n junction is totally eliminated in the device structure for both source and drain. Low interface charges in the silicon-on-insulator/silicon direct bonding (SOI/SDB) structure allow the fabrication of the FD CBCMOS. Numerical simulation and experimental measurement have demonstrated that no kink effect is present and that the device has the potential for VLSI applications due to the absence of the p-n junction and the superior SOI/SDB material quality.<>