Title :
High-Performance InAs Nanowire MOSFETs
Author :
Dey, Anil W. ; Thelander, Claes ; Lind, Erik ; Dick, Kimberly A. ; Borg, B. Mattias ; Borgström, Magnus ; Nilsson, Peter ; Wernersson, Lars-Erik
Author_Institution :
Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
fDate :
6/1/2012 12:00:00 AM
Abstract :
In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high- process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2(VD = 0.5 V) . For a nominal LG = 100 nm, we observe an extrinsic transconductance (g_m) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV .
Keywords :
MOSFET; aluminium compounds; hafnium compounds; indium compounds; nanowires; semiconductor doping; Al2O3-HfO2; InAs; current density; extrinsic transconductance; high drive currents; high-performance nanowire MOSFET; n-i-n doping profile; size 100 nm; size 15 nm; voltage 0.5 V; voltage 10 mV; Aluminum oxide; Hafnium compounds; Logic gates; MOSFETs; Nanoscale devices; Transconductance; Atomic layer deposition (ALD); InAs; MOSFET; current density $(J_{e})$; high-$kappa$ integration; nanowire; on-current $(I_{ON})$; scaling; subthreshold swing (SS); transconductance $(g_{m})$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2190132
