DocumentCode :
1497967
Title :
Nonvolatile semiconductor memory revolutionizing information storage
Author :
Lu, Chih-yuan ; Kuan, Howard
Author_Institution :
MXIC & Ardentec Corp, Taiwan
Volume :
3
Issue :
4
fYear :
2009
fDate :
12/1/2009 12:00:00 AM
Firstpage :
4
Lastpage :
9
Abstract :
(1) NVSM has revolutionized the information-storage technology and has ushered in the mobile electronics era. (2) NVSM has enabled the development of numerous new electronic applications and has penetration rates of over 90% in electronic systems since 2005; it is ubiquitous. (3) Flash memory owns many good attributes for an almost ideal memory. Therefore, it is an inevitable key component in many applications. (4) NAND-based Flash is not only for memory use but is the best solution today for semiconductor digital-mass storage among all other semiconductor choices. Many exotic/emerging technologies are under research for the next-generation candidate, but as of today, none are ready to overtake the floating-gate NVSM- the gap is still quite large.
Keywords :
flash memories; information storage; random-access storage; flash memory; information storage; mobile electronics; nonvolatile semiconductor memory; Application software; EPROM; Electronics industry; Flash memory; Nonvolatile memory; PROM; Personal digital assistants; Random access memory; Semiconductor memory; Silicon;
fLanguage :
English
Journal_Title :
Nanotechnology Magazine, IEEE
Publisher :
ieee
ISSN :
1932-4510
Type :
jour
DOI :
10.1109/MNANO.2009.934861
Filename :
5284480
Link To Document :
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