DocumentCode
1497988
Title
A 55-V, 0.2-m Omega -cm/sup 2/ vertical trench power MOSFET
Author
Shenai, Krishna
Author_Institution
Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA
Volume
12
Issue
3
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
108
Lastpage
110
Abstract
Experimental results that demonstrate trench power MOSFETs with a specific on-state resistance of 0.2 m Omega -cm/sup 2/ and capable of sustaining 55 V across drain-source terminals in the off state are discussed. This performance was achieved by using an improved silicon trench processing technology. The forward conductivity reported is the highest ever obtained for a silicon power device.<>
Keywords
insulated gate field effect transistors; power transistors; semiconductor technology; 55 V; UMOS; VMOS; forward conductivity; low voltage power MOSFET technology; specific on-state resistance; trench processing technology; vertical trench power MOSFET; Breakdown voltage; Conductivity; MOSFET circuits; Power MOSFET; Power semiconductor devices; Power semiconductor switches; Protection; Silicon; Surface cleaning; Wet etching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.75727
Filename
75727
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