Title :
A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process
Author :
Thomsen, Axel ; Brooke, Martin A.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2- mu m double-polysilicon CMOS technology is discussed. Tunneling occurs at a crossover of polysilicon 1 with polysilicon 2. Device layout and basic device characteristics are presented, and recommendations for efficient programming are given. This is the first floating-gate FET with a tunneling injector fabricated in standard technology that has close to symmetric programming characteristics for both charging and discharging of the gate.<>
Keywords :
EPROM; MOS integrated circuits; insulated gate field effect transistors; tunnelling; 2 micron; Fowler-Nordheim tunneling; bidirectional programming; device characteristics; device layout; floating-gate FET; floating-gate MOSFET; programmable MOSFET; recommendations for efficient programming; standard double-polysilicon CMOS process; symmetric programming characteristics; tunneling injector; tunneling injector fabricated in standard technology; CMOS process; CMOS technology; Capacitors; EPROM; FETs; MOSFET circuits; Nonvolatile memory; Slabs; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
