Reduction of backgating in GaAs SISFET´s with a low-temperature buffer

Author

Solomon, Paul M. ; Wright, Steven L. ; Canora, F.J.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

12

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

117

Lastpage

119

Abstract

The use of a low-temperature molecular beam epitaxy (MBE)-grown buffer layer to reduce backgating in GaAs/AlGaAs semiconductor-insulator-semiconductor FETs (SISFETs) is discussed. Comparison with a control wafer having no low-temperature buffer (LTB) reveals an improvement in backgating threshold voltage by a factor of 3, improvement in output conductance and short-channel characteristics, and no significant change in threshold voltage, threshold-voltage spread, and microwave characteristics. The FETs with LTB exhibited increased sensitivity, at 80 K, to trapping of hot electrons.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor-insulator-semiconductor structures; 80 K; GaAs-AlGaAs; MBE; SISFETs; backgating reductions; backgating threshold voltage; low-temperature buffer; low-temperature molecular beam epitaxy; microwave characteristics; output conductance; semiconductor-insulator-semiconductor FETs; semiconductors; short-channel characteristics; threshold voltage; threshold-voltage spread; trapping of hot electrons; Buffer layers; Electrons; FETs; Gallium arsenide; HEMTs; Heat treatment; MODFETs; Molecular beam epitaxial growth; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75729

Filename

75729