DocumentCode
1498061
Title
Amorphous-silicon thin-film transistors with very high field-effect mobility
Author
Lin, Jyh-Ling ; Sah, Wen-Jyh ; Lee, Si-Chen
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
12
Issue
3
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
120
Lastpage
121
Abstract
The fabrication and performance of hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with field-effect mobilities of 5.1 cm/sup 2//V-s are discussed. This is the highest field-effect mobility of this type of TFT reported to date. The device shows an on/off current ratio exceeding 10/sup 5/ and a subthreshold swing of 0.5 V/decade.<>
Keywords
amorphous semiconductors; elemental semiconductors; hydrogen; insulated gate field effect transistors; semiconductor technology; silicon; thin film transistors; amorphous Si:H; field-effect mobilities; on/off current ratio; semiconductors; subthreshold swing; thin-film transistors; very high field-effect mobility; Annealing; Chemicals; Chromium; Electrodes; Electron mobility; Fabrication; Glass; Gold; Thin film transistors; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.75730
Filename
75730
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