Magnetoresistance and Magnetic Properties of Co(tCo)/Cu Multilayer Films

Author

Rizal, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

2394

Lastpage

2396

Abstract

The paper reports on the magnetoresistance (MR) effect of ferromagnetic Co(tCo)/Cu multilayer films grown with pulse electrochemical deposition on top of a thin conducting layer of copper (15 nm). The copper buffer layer was grown on a polyamide substrate (1.69 cm²) and annealed. A strain was applied mechanically to study the MR effect and magnetic characteristics as a function of the Co layer thickness. The induced uniaxial magnetic anisotropy was observed due to the effect of strain in all the multilayer films. The multilayer [Co 1.0 nm/Cu 1.5 nm]₅₀ showed a minimum hysteresis loss. The MR ratio was ~ 3.4% at 1 kOe. A remarkable difference of magnetoresistance ratio was observed, corresponding to the orientation of magnetization curves.

Keywords

annealing; buffer layers; cobalt; copper; electrochemistry; electrodeposition; ferromagnetic materials; magnetic anisotropy; magnetic hysteresis; magnetic multilayers; magnetic thin films; magnetoresistance; Co-Cu; annealing; copper buffer layer; ferromagnetic multilayer films; magnetic properties; magnetization curves; magnetoresistance; minimum hysteresis loss; pulse electrochemical deposition; thin conducting layer; uniaxial magnetic anisotropy; Annealing; Buffer layers; Conductive films; Copper; Magnetic anisotropy; Magnetic field induced strain; Magnetic films; Magnetic multilayers; Magnetic properties; Magnetoresistance; Anisotropy; Co(tCo)/Cu; magnetoresistance effect; multilayer; pulse electrodeposition;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2044761

Filename

5467403