A new technique for determining the capture cross section of the oxide traps in MOS structures

Author

Xu, Mingzhen ; Tan, Changhua ; Wang, Yangyuan

Author_Institution

Dept. of Comput. Sci. & Technol., Peking Univ., China

Volume

12

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

122

Lastpage

124

Abstract

The use of an oxide voltage relaxation spectroscopy technique based on voltage-electron fluence measurements on a MOS structure under high constant current stresses for determining the trapping parameters in thin oxide is discussed. Oxide voltage relaxation spectroscopy is essentially an ultralow-speed real-fluence differential sampling technique. This technique has the benefits of accuracy, speed, and convenience, and it is useful for the study of complex oxide trap phenomena. This method has been used to determine the capture cross section of the oxide traps in thin SiO/sub 2/.<>

Keywords

dielectric thin films; electron traps; metal-insulator-semiconductor structures; silicon compounds; MOS structure; capture cross-section measurement; complex oxide trap phenomena; high constant current stresses; oxide voltage relaxation spectroscopy; thin SiO/sub 2/; trapping parameters in thin oxide; ultralow-speed real-fluence differential sampling technique; voltage-electron fluence measurements; Anodes; Electron traps; Equations; MOS devices; Sampling methods; Silicon; Spectroscopy; Stress; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75731

Filename

75731