Impurity barrier properties of reoxidized nitrided oxide films for use with P/sup +/-doped polysilicon gates

Author

Cable, James S. ; Mann, R.A. ; Woo, Jason C S

Author_Institution

Solid State Electron. Lab., California Univ., Los Angeles, CA, USA

Volume

12

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

128

Lastpage

130

Abstract

The ability of thin reoxidized nitrided oxide (ONO) gate dielectrics formed by rapid thermal processing to act as a barrier to boron penetration resulting from p/sup +/ poly gate processing are investigated. Measurements comparing the threshold voltage instability of capacitors fabricated with BF/sub 2/ implanted poly gates subjected to various postgate thermal cycles have been performed. The ONO gate dielectrics are found to be an excellent impurity barrier to boron diffusion, even in the presence of fluorine. The extent of the nitridation is also found to affect the diffusion barrier properties, with the highest temperature nitridations forming the best barriers. Reoxidation of the nitrided films reduces the barrier properties somewhat, but improvement is still observed over SiO/sub 2/.<>

Keywords

boron; dielectric thin films; insulated gate field effect transistors; nitridation; silicon compounds; B diffusion prevention; ONO diffusion barriers; ONO gate dielectrics; P/sup +/-doped polysilicon gates; SiO/sub x/N/sub y/; diffusion barrier properties; impurity barrier; nitridation; polycrystalline Si gate; rapid thermal processing; reoxidized nitrided oxide films; Boron; CMOS technology; Furnaces; Implants; Impurities; Laboratories; Performance evaluation; Rapid thermal processing; Solid state circuits; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75733

Filename

75733