A new physical model for calculating storage time in GTO thyristors

A two-dimensional analytical model, developed from first principles, to substantiate the dependence of storage time on the nature of the gate current ramp, anode current, and device geometry, as observed in experimental studies on single-element gate turn-off thyristors (GTOs), is discussed. The model originates in the solution of the continuity equation in the p base for evaluation of the plasma squeezing rate. It addresses realistic issues, such as high injection effects, variation in the base transport factors, and the physical basis for the minimum ON region dimension, that are not considered in any previous treatment.<>