Title :
Large-area, 8-cm/sup 2/ GaAs solar cells fabricated from MBE material
Author :
Melloch, Michael R. ; Harmon, E.S ; Emergy, K.A.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A GaAs solar cell with an area of 2 cm*4 cm fabricated from a film grown by molecular beam epitaxy (MBE) on a 5.08-cm-diameter GaAs substrate is discussed. This is the largest device ever fabricated from MBE material. The cell demonstrated an efficiency of 21.7% under one-sun AM1.5 conditions at 25 degrees C and 18.8% under one-sun AM0 conditions at 28 degrees C.<>
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; solar cells; 2 cm; 21.7 percent; 25 C; 28 C; 4 cm; 5.08 cm; GaAs solar cell; GaAs substrate; MBE material; efficiency; large area solar cells; molecular beam epitaxy; one-sun AM0 conditions; one-sun AM1.5 conditions; semiconductors; Furnaces; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Solar energy; Substrates; Superlattices; Temperature;
Journal_Title :
Electron Device Letters, IEEE
