Title :
Hot-carrier aging of the MOS transistor in the presence of spin-on glass as the interlevel dielectric
Author :
Lifshitz, N. ; Smolinsky, G.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
The effect of introducing a polysilicate or polysiloxane spin-on glass (SOG) as a component of the interlevel dielectric in a multilevel integrated circuit on the hot-carrier aging of the MOS transistor is discussed. It was found that the presence of SOG led to accelerated aging of the MOS transistor: factors of 20 and 5 for silicate and siloxane, respectively. This effect is attributed to water absorbed in the SOG films. a correlation was found for the hot-carrier aging rate and the amount of absorbed water.<>
Keywords :
ageing; glass; hot carriers; insulated gate field effect transistors; metallisation; reliability; MOS transistor; SOG; absorbed water; accelerated aging; hot-carrier aging; hot-carrier aging rate; interlevel dielectric; multilevel integrated circuit; polysilicate; polysiloxane; spin-on glass; Accelerated aging; Aluminum; Dielectrics; Glass; Hot carriers; Hydrogen; MOSFETs; Plasma temperature; Rough surfaces; Surface roughness;
Journal_Title :
Electron Device Letters, IEEE
