DocumentCode :
1498111
Title :
The Effect of Injection Layers on a Room Temperature Organic Spin Valve
Author :
Dhandapani, Dhana ; Morley, Nicola A. ; Gibbs, Mike R J ; Kreouzis, Theo ; Shakya, Pabrita ; Desai, Pratik ; Gillin, William P.
Author_Institution :
Dept. of Eng. Mater., Univ. of Sheffield, Sheffield, UK
Volume :
46
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
1307
Lastpage :
1310
Abstract :
Organic spin-valve devices with tris 8-hydroxyquinoline aluminium (Alq3) as a spacer layer and Fe50Co50 and Ni81Fe19 as the spin-polarized ferromagnetic electrodes have been fabricated. Additional organic layers of N, N´-diphenyl-N, N´ bis(3-methylphenyl)-(1, 1´-biphenyl)-4, 4´ diamine (TPD) and LiF were added to study the changes in the spin injection and extraction efficiency of the carriers into and from the organic spacer layer. Room temperature magnetoresistance (MR) measurements were carried out. The MR was observed to be the largest in the devices containing both additional layers, indicating the crucial role of injection and collection efficiency at the interfaces in the degree of spin-polarized conduction in these structures.
Keywords :
magnetoresistance; organic semiconductors; semiconductor devices; spin valves; 8-hydroxyquinoline aluminium; injection layers; organic semiconductors; organic spin-valve devices; room temperature organic spin valve; spacer layer; spin injection; spin-polarized conduction; spin-polarized ferromagnetic electrodes; spintronics; temperature 293 K to 298 K; Aluminum; Electrodes; Electrons; Giant magnetoresistance; Magnetic semiconductors; Magnetoelectronics; Organic semiconductors; Polymers; Spin valves; Temperature measurement; Interface layers; magnetoresistance (MR); organic semiconductors; spintronics;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2010.2043818
Filename :
5467409
Link To Document :
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