The Effect of Injection Layers on a Room Temperature Organic Spin Valve

Author

Dhandapani, Dhana ; Morley, Nicola A. ; Gibbs, Mike R J ; Kreouzis, Theo ; Shakya, Pabrita ; Desai, Pratik ; Gillin, William P.

Author_Institution

Dept. of Eng. Mater., Univ. of Sheffield, Sheffield, UK

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1307

Lastpage

1310

Abstract

Organic spin-valve devices with tris 8-hydroxyquinoline aluminium (Alq₃) as a spacer layer and Fe₅₀Co₅₀ and Ni₈₁Fe₁₉ as the spin-polarized ferromagnetic electrodes have been fabricated. Additional organic layers of N, N´-diphenyl-N, N´ bis(3-methylphenyl)-(1, 1´-biphenyl)-4, 4´ diamine (TPD) and LiF were added to study the changes in the spin injection and extraction efficiency of the carriers into and from the organic spacer layer. Room temperature magnetoresistance (MR) measurements were carried out. The MR was observed to be the largest in the devices containing both additional layers, indicating the crucial role of injection and collection efficiency at the interfaces in the degree of spin-polarized conduction in these structures.

Keywords

magnetoresistance; organic semiconductors; semiconductor devices; spin valves; 8-hydroxyquinoline aluminium; injection layers; organic semiconductors; organic spin-valve devices; room temperature organic spin valve; spacer layer; spin injection; spin-polarized conduction; spin-polarized ferromagnetic electrodes; spintronics; temperature 293 K to 298 K; Aluminum; Electrodes; Electrons; Giant magnetoresistance; Magnetic semiconductors; Magnetoelectronics; Organic semiconductors; Polymers; Spin valves; Temperature measurement; Interface layers; magnetoresistance (MR); organic semiconductors; spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2043818

Filename

5467409