Title :
Fabrication of high-performance Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As/GaAs resonant tunneling diodes using a microwave-compatible technology
Author :
Lippens, D. ; Barbier, E. ; Mounaix, P.
Author_Institution :
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille Flanders Artois, Villeneuve d´´Ascq, France
fDate :
3/1/1991 12:00:00 AM
Abstract :
A microwave-compatible process for fabricating planar integrated resonant tunneling diodes (RTDs) is described. High-performance RTDs have been fabricated using Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As/GaAs strained layers. Peak-to-valley current ratios (PVRs) of 4.8:1 with simultaneous peak current densities of 4*10/sup 4/ A/cm/sup 2/ have been achieved at room temperature for diodes of area 9 mu m/sup 2/. Accurate measurements of reflection gain versus frequency between 1.5 and 26.5 GHz in the negative differential region indicate that the present technology is promising for millimeter-wave integrated circuits including self-oscillating mixers, frequency multipliers, and detectors.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor technology; solid-state microwave devices; tunnel diodes; Al/sub x/Ga/sub 1-x/As-In/sub y/Ga/sub 1-y/As-GaAs; PVRs; RTDs; cross-section area; detectors; fabrication; frequency; frequency multipliers; microwave-compatible process; microwave-compatible technology; millimeter-wave integrated circuits; negative differential region; peak current densities; peak to valley current ratios; planar integrated resonant tunneling diodes; reflection gain; resonant tunneling diodes; room temperature; self-oscillating mixers; semiconductor strained layers; semiconductors; Current density; Diodes; Fabrication; Frequency measurement; Gain measurement; Gallium arsenide; Integrated circuit measurements; Millimeter wave measurements; Resonant tunneling devices; Temperature;
Journal_Title :
Electron Device Letters, IEEE
