Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

Author

Trajkovic, T. ; Udrea, F. ; Waind, P.R. ; Thomson, J. ; Amaratunga, G.A.J. ; Milne, W.I.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

148

Issue

2

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

71

Lastpage

74

Abstract

The trench insulated gate bipolar transistor (IGBT) is widely regarded as a worthy replacement of DMOS IGBTs and GTO thyristors in a wide range of applications, from motor control (1.4 kV) to HVDC (6.5 kV). An optimum design of 1.4 kV NPT trench IGBTs using a new fully integrated optimisation system comprised of process and device simulators and an RSM optimiser is described. The use of this new TCAD system has contributed largely to realising devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4 kV trench IGBTs are reported, which are in excellent agreement with the TCAD predictions

Keywords

insulated gate bipolar transistors; isolation technology; power semiconductor switches; semiconductor device models; technology CAD (electronics); 1.4 kV; RSM optimiser; TCAD system; device simulators; high-power switching devices; integrated optimisation system; nonpunchthrough trench IGBTs;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20010165

Filename

926411