Clustered insulated gate bipolar transistor: a new power semiconductor device

Author

Sweet, M. ; Pulber, O. ; Bose, J. V Subhas Chandra ; Ngwendson, L. ; Vershinin, K.V. ; De Souza, M.M. ; Narayanan, E.M.S.

Author_Institution

Emerging Technols Res. Centre, De Montfort Univ., Leicester, UK

Volume

148

Issue

2

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

75

Lastpage

78

Abstract

For the first time, the authors demonstrated a new MOS gated thyristor called the clustered insulated gate bipolar transistor (CIGBT), which is formed by clustering power MOSFET cathode cells within common n- and p-wells. The nand p-wells also provide a unique self-clamping feature that protects the cathode from any surge current or voltage and thus improve its safe operating area. Detailed electrical simulations of 3 kV structures derived directly from a process simulator indicate at least 30% improvement in the on-state and switching performance of the CIGBT in comparison to an IGBT

Keywords

MOS-controlled thyristors; insulated gate bipolar transistors; losses; 3 kV; MOS gated thyristor; MOSFET cathode cells; clustered insulated gate bipolar transistor; common n-/p-wells; power semiconductor device; process simulator; safe operating area; self-clamping feature; surge current; switching performance;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20010168

Filename

926412