Title :
Diamond MESFET using ultrashallow RTP boron doping
Author :
Tsai, W. ; Delfino, M. ; Hodul, D. ; Riaziat, M. ; Ching, L.Y. ; Reynolds, G. ; Cooper, C.B., III
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
A diamond p-type depletion-mode MESFET was fabricated using a novel doping technique to drive in and activate boron in type IIa diamond. An ultrashallow p-doped channel of less than 500 AA was created by this rapid-thermal-processing (RTP) solid-state diffusion using cubic boron nitride as the dopant source. The MESFET was observed to pinch off at high positive gate bias, and reverse-bias leakage was below 10/sup -12/ A at +5 V. The ultrashallow channel depth is believed to be a critical factor in obtaining excellent device modulation.<>
Keywords :
Schottky gate field effect transistors; boron; diamond; diffusion in solids; elemental semiconductors; semiconductor doping; C:B; device modulation; doping technique; p-type depletion-mode MESFET; rapid-thermal-processing; reverse-bias leakage; solid-state diffusion; ultrashallow p-doped channel; Boron; Chemicals; Doping; Electron mobility; Ion beams; MESFETs; Nitrogen; Schottky diodes; Solid state circuits; Transistors;
Journal_Title :
Electron Device Letters, IEEE
