DocumentCode
1498151
Title
Diamond MESFET using ultrashallow RTP boron doping
Author
Tsai, W. ; Delfino, M. ; Hodul, D. ; Riaziat, M. ; Ching, L.Y. ; Reynolds, G. ; Cooper, C.B., III
Author_Institution
Varian Res. Center, Palo Alto, CA, USA
Volume
12
Issue
4
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
157
Lastpage
159
Abstract
A diamond p-type depletion-mode MESFET was fabricated using a novel doping technique to drive in and activate boron in type IIa diamond. An ultrashallow p-doped channel of less than 500 AA was created by this rapid-thermal-processing (RTP) solid-state diffusion using cubic boron nitride as the dopant source. The MESFET was observed to pinch off at high positive gate bias, and reverse-bias leakage was below 10/sup -12/ A at +5 V. The ultrashallow channel depth is believed to be a critical factor in obtaining excellent device modulation.<>
Keywords
Schottky gate field effect transistors; boron; diamond; diffusion in solids; elemental semiconductors; semiconductor doping; C:B; device modulation; doping technique; p-type depletion-mode MESFET; rapid-thermal-processing; reverse-bias leakage; solid-state diffusion; ultrashallow p-doped channel; Boron; Chemicals; Doping; Electron mobility; Ion beams; MESFETs; Nitrogen; Schottky diodes; Solid state circuits; Transistors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.75749
Filename
75749
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