Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor

Author

Spulber, O. ; De Souza, M.M. ; Sweet, M. ; Bose, J. V Subhas Chandra ; Narayanan, E. M Sankara

Author_Institution

Emerging Technols. Res. Centre, De Montfort Univ., Leicester, UK

Volume

148

Issue

2

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

79

Lastpage

82

Abstract

A novel 1.2 kV, trench-planar insulated gate bipolar transistor (TPIGBT) is analysed in detail using numerical modelling techniques to evaluate the influence of the injection-enhancement (IE) effect. A major innovative aspect of the device is that the trench and the planar gate oxide dimensions can be independently optimised to achieve superior performance. Furthermore, it is shown that the low conduction losses of the TPIGBT are a direct consequence of the IE effect. Results indicate a good trade-off in terms of on-state and turn-off losses in comparison to the planar and trench gated IGBTs

Keywords

insulated gate bipolar transistors; losses; power transistors; semiconductor device models; 1.2 kV; conduction losses; injection-enhancement effect; numerical modelling techniques; on-state losses; planar gate oxide dimensions; trench dimensions; trench-planar insulated gate bipolar transistor; turn-off losses;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20010294

Filename

926413