Title :
Electromechanical evaluation of a bondless pressure contact IGBT
Author :
Wakema, F.J. ; Lockwood, G.W.
Author_Institution :
Westcode Semiconds. Ltd., Chippenham, UK
fDate :
4/1/2001 12:00:00 AM
Abstract :
The paper presents some of the electromechanical design strategies used in the implementation of a completely bond free, pressure contacted IGBT with integral anti-parallel diode. The mechanical, thermal and electrical properties of a pressure contacted IGBT are compared to those exhibited by substrate mounted devices. These differences indicate that the bondless pressure contact IGBT offers the potential of higher reliability and other exploitable advantages in certain applications
Keywords :
insulated gate bipolar transistors; power semiconductor switches; semiconductor device packaging; semiconductor device reliability; bondless pressure contact IGBT; electrical properties; electromechanical design strategies; integral anti-parallel diode; reliability; substrate mounted devices; thermal properties;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20010295
