• DocumentCode
    1498172
  • Title

    Finite element modelling of thermal fatigue effects in IGBT modules

  • Author

    Shammas, N.Y.A. ; Rodriguez, M.P. ; Plumpton, A.T. ; Newcombe, D.

  • Author_Institution
    Sch. of Eng. & Advanced Technol., Staffordshire Univ., Stafford, UK
  • Volume
    148
  • Issue
    2
  • fYear
    2001
  • fDate
    4/1/2001 12:00:00 AM
  • Firstpage
    95
  • Lastpage
    100
  • Abstract
    The effects of progressive thermal fatigue of the solder layer interface on the thermal performance of power module packages have been investigated. Specifically, in the paper the analysis of an 800 A-1800 V IGBT module using finite element techniques is performed. The use of this technique for modelling fatigue effects is thus demonstrated, and a method for estimating the fatigue lifetime of soldered power modules based on the Coffin-Manson relation is also given. Assessed parameters in the three-dimensional model are the thermal resistance, heat flux distribution through the different layers and maximum die temperature. The critical crack length at which the thermal resistance significantly increases is determined from the two-dimensional model. The temperature excursion and shear strain of the solder layer are estimated from dynamic analysis. Finally, all achieved models are calibrated by comparison of predicted results with simple theory and direct temperature measurements
  • Keywords
    finite element analysis; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device reliability; thermal resistance; thermal stress cracking; 1800 V; 800 A; Coffin-Manson relation; IGBT module; IGBT modules; crack length; die temperature; direct temperature measurements; dynamic analysis; fatigue lifetime; finite element modelling; heat flux distribution; power module packages; progressive thermal fatigue; shear strain; solder layer; soldered power modules; temperature excursion; thermal fatigue effects; thermal resistance; three-dimensional model; two-dimensional model;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:20010293
  • Filename
    926416