DocumentCode
1498195
Title
The use of ultrathin reoxidized nitrided gate oxide for suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs
Author
Lo, G.Q. ; Kwong, Dim-Lee
Author_Institution
Texas Univ., Austin, TX, USA
Volume
12
Issue
4
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
175
Lastpage
177
Abstract
The authors report the use of rapid thermal reoxidized nitrided thin ( approximately 90-AA) gate oxides in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs. Although lightly nitrided gate oxides are unable to block the boron penetration, reoxidized nitrided gate oxides are found to have excellent barrier properties against boron penetration. In addition, excellent electrical characteristics in terms of device subthreshold conduction and transconductance are illustrated.<>
Keywords
boron compounds; elemental semiconductors; insulated gate field effect transistors; ion implantation; silicon; Si : BF/sub 2//sup +/; barrier properties; device subthreshold conduction; electrical characteristics; p-MOSFETs; penetration; transconductance; ultrathin reoxidized nitrided gate oxide; Annealing; Boron; CMOS technology; Electric variables; MOS capacitors; MOSFET circuits; Rapid thermal processing; Silicon; Subthreshold current; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.75755
Filename
75755
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