Title :
The use of ultrathin reoxidized nitrided gate oxide for suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs
Author :
Lo, G.Q. ; Kwong, Dim-Lee
Author_Institution :
Texas Univ., Austin, TX, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
The authors report the use of rapid thermal reoxidized nitrided thin ( approximately 90-AA) gate oxides in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs. Although lightly nitrided gate oxides are unable to block the boron penetration, reoxidized nitrided gate oxides are found to have excellent barrier properties against boron penetration. In addition, excellent electrical characteristics in terms of device subthreshold conduction and transconductance are illustrated.<>
Keywords :
boron compounds; elemental semiconductors; insulated gate field effect transistors; ion implantation; silicon; Si : BF/sub 2//sup +/; barrier properties; device subthreshold conduction; electrical characteristics; p-MOSFETs; penetration; transconductance; ultrathin reoxidized nitrided gate oxide; Annealing; Boron; CMOS technology; Electric variables; MOS capacitors; MOSFET circuits; Rapid thermal processing; Silicon; Subthreshold current; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
